Photodetector
A photodetector is an optoelectronic device that senses light and converts it into an electrical signal. They are crucial for optical communication, imaging, se...
A photodiode is a semiconductor sensor that converts light into an electrical current, essential for precision light measurement in science and industry.
A photodiode is a solid-state, semiconductor-based sensor designed to convert light into an electrical current with exceptional speed, accuracy, and linearity. Photodiodes play a pivotal role in photometry—the science of measuring light—as well as in fiber-optic communications, environmental sensing, medical diagnostics, and scientific research.
At the heart of a photodiode is a junction between two differently doped semiconductor regions—commonly a PN or a PIN (p-type, intrinsic, n-type) structure. When photons strike the depletion region (the area near the junction where charge carriers are depleted), their energy generates electron-hole pairs. The built-in electric field rapidly separates these carriers: electrons are drawn to the n-side, holes to the p-side, resulting in a measurable photocurrent. This process is governed by the internal photoelectric effect.
Photodiodes are typically operated under reverse bias (where the p-side is connected to the negative terminal and the n-side to the positive), which widens the depletion region, reduces capacitance, and improves response speed. In some precision applications, they may be used in zero-bias (photovoltaic) mode.
Quantum efficiency is the ratio of collected charge carriers to incident photons, expressed as a percentage. It reflects how efficiently a photodiode converts light to electrical current and varies with wavelength. Silicon photodiodes can achieve QE values of 80–95% in the visible spectrum. High QE is vital for low-light sensitivity and accurate photometric measurements.
Responsivity (A/W) quantifies the photocurrent generated per unit of incident optical power at a given wavelength. It directly relates to quantum efficiency and is crucial for determining how much electrical signal a photodiode will produce for a given amount of light. Typical silicon photodiodes have peak responsivity around 0.6 A/W at 900 nm.
Dark current is the leakage current present even in complete darkness, arising from thermally generated carriers and surface leakage. It is a source of noise and limits sensitivity, especially in low-light applications. Quality photodiodes feature dark currents as low as a few picoamperes.
LDR defines the range of light intensities over which the output is linearly proportional to incident light. Expressed in decibels (dB), a high LDR (often >120 dB for PIN photodiodes) ensures accurate measurement from very dim to very bright light.
NEP is the minimum optical power required to produce a signal equal to the device’s RMS noise in a 1 Hz bandwidth. Lower NEP means better sensitivity. Detectivity (D*) normalizes NEP for device area and bandwidth, allowing direct comparison between different photodiodes. High D* indicates high sensitivity.
Junction capacitance arises from charge separation in the depletion region; lower capacitance enables higher bandwidth and faster response, critical in high-speed applications.
Shunt resistance is the resistance across the junction, representing unwanted leakage paths. High shunt resistance ensures low noise and better linearity, especially in photovoltaic (zero-bias) operation.
The photosensitive area determines how much light the photodiode can collect. Larger areas improve sensitivity but increase capacitance, which can slow the response.
The depletion region is central to photodiode function. Its width, determined by doping levels and reverse bias, affects sensitivity, speed, and spectral response. PIN structures maximize this region for optimal performance, while surface engineering ensures efficient absorption of desired wavelengths.
Selecting a photodiode involves balancing parameters:
Proper circuit design—using low-noise amplifiers, guarding against leakage, and matching impedance—further enhances performance.
Typical responsivity curve for a silicon photodiode, peaking in the visible/NIR range.
Equivalent circuit model showing junction capacitance and shunt resistance.
A photodiode is an indispensable tool in precision light measurement, offering unmatched linearity, speed, and sensitivity. By understanding key parameters like quantum efficiency, responsivity, dark current, and dynamic range, users can select the right photodiode for applications ranging from photometry and scientific analysis to communications and healthcare.
For expert guidance in choosing the ideal photodiode for your measurement needs, contact us or schedule a demo with our team.ur team.
A photodiode is a semiconductor device that converts light into an electrical current. When photons strike its depletion region, they generate electron-hole pairs. The built-in electric field separates these carriers, producing a current proportional to the incident light intensity. Photodiodes are widely used for accurate and fast light measurement in applications like photometry, fiber-optic communication, and scientific sensing.
The two most common types are PN junction and PIN photodiodes. PIN photodiodes, featuring an intrinsic (undoped) layer between P and N regions, offer greater sensitivity and speed due to a wider depletion region. Specialized photodiodes, such as avalanche photodiodes (APDs), provide internal gain for detecting extremely low light levels.
Key parameters include responsivity (how much current is produced per unit optical power), quantum efficiency (conversion efficiency of photons to electrons), dark current (leakage current in darkness), linear dynamic range (span of light intensities with linear output), noise-equivalent power (NEP), detectivity (D*), junction capacitance, shunt resistance, and the size of the photosensitive area. The optimal choice depends on your application's light level, speed, and accuracy requirements.
Quantum efficiency (QE) measures the percentage of incident photons that are converted into charge carriers and collected. High QE means more light is converted into electrical signal, improving sensitivity. QE varies with wavelength, so matching QE to the target spectral range is important for accurate photometric measurements.
Dark current is the small current present in a photodiode even without light, mainly due to thermally generated carriers. High dark current increases noise and limits sensitivity, especially in low-light applications. Selecting devices with low dark current and using cooling or special packaging can minimize its impact.
LDR defines the range of light intensities over which the photodiode's output remains linearly proportional to incident optical power. A high LDR allows accurate measurement from very dim to very bright light. High-quality silicon PIN photodiodes can achieve LDRs greater than 120 dB, suitable for a broad spectrum of light conditions.
Junction capacitance, determined by the depletion region width and device area, affects the speed and bandwidth of a photodiode. Lower capacitance allows faster response and higher bandwidth, which is critical in high-speed applications like fiber-optic receivers or pulsed light measurement.
Detectivity (D*) is a normalized measure of a photodiode’s sensitivity, accounting for device area and bandwidth. It enables comparison across different sensor sizes and types. Higher D* values indicate better ability to detect low-level light signals, especially important in scientific and low-light applications.
Discover how advanced photodiode sensors can improve the accuracy and speed of your light measurement systems. Contact our experts or schedule a demo today to explore tailored solutions for your application.
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